? semiconductor components industries, llc, 2013 august, 2013 ? rev. 13 1 publication order number: mmbt2907alt1/d mmbt2907al, SMMBT2907AL general purpose transistors pnp silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable maximum ratings rating symbol value unit collector ? emitter voltage v ceo ? 60 vdc collector ? base voltage v cbo ? 60 vdc emitter ? base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 600 madc collector current ? peak (note 3) i cm ? 1200 madc thermal characteristics characteristic symbol max unit total device dissipation ? fr ? 5 board (note 1) @t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation ? alumina substrate, (note 2) @t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w total device dissipation ? heat spreader or equivalent, (note 4) @t a = 25 c p d 350 mw thermal resistance, junction ? to ? ambient r ja 357 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. reference soa curve. 4. heat spreader or equivalent = 450 mm 2 , 2 oz. 2f = device code m = date code* = pb ? free package http://onsemi.com collector 3 1 base 2 emitter device package shipping ? ordering information mmbt2907alt3g SMMBT2907ALt3g sot ? 23 (pb ? free) ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. mmbt2907alt1g SMMBT2907ALt1g sot ? 23 (pb ? free) (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. 3000 / tape & reel 10,000 / tape & reel sot ? 23 (to ? 236ab) case 318 style 6 marking diagram 1 2 1 3 2f m
mmbt2907al, SMMBT2907AL http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 5) (i c = ? 1.0 madc, i b = 0) (i c = ? 10 madc, i b = 0) v (br)ceo ? 60 ? 60 ? ? vdc collector ? base breakdown voltage (i c = ? 10 adc, i e = 0) v (br)cbo ? 60 ? vdc emitter ? base breakdown voltage (i e = ? 10 adc, i c = 0) v (br)ebo ? 5.0 ? vdc collector cutoff current (v ce = ? 30 vdc, v eb(off) = ? 0.5 vdc) i cex ? ? 50 nadc collector cutoff current (v cb = ? 50 vdc, i e = 0) (v cb = ? 50 vdc, i e = 0, t a = 125 c) i cbo ? ? ? 0.010 ? 10 adc base cutoff current (v ce = ? 30 vdc, v eb(off) = ? 0.5 vdc) i bl ? ? 50 nadc on characteristics dc current gain (i c = ? 0.1 madc, v ce = ? 10 vdc) (i c = ? 1.0 madc, v ce = ? 10 vdc) (i c = ? 10 madc, v ce = ? 10 vdc) (i c = ? 150 madc, v ce = ? 10 vdc) (i c = ? 500 madc, v ce = ? 10 vdc) (note 5) h fe 75 100 100 100 50 ? ? ? 300 ? ? collector ? emitter saturation voltage (note 5) (i c = ? 150 madc, i b = ? 15 madc) (note 5) (i c = ? 500 madc, i b = ? 50 madc) v ce(sat) ? ? ? 0.4 ? 1.6 vdc base ? emitter saturation voltage (note 5) (i c = ? 150 madc, i b = ? 15 madc) (i c = ? 500 madc, i b = ? 50 madc) v be(sat) ? ? ? 1.3 ? 2.6 vdc small ? signal characteristics current ? gain ? bandwidth product (notes 5, 6), (i c = ? 50 madc, v ce = ? 20 vdc, f = 100 mhz) f t 200 ? mhz output capacitance (v cb = ? 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = ? 2.0 vdc, i c = 0, f = 1.0 mhz) c ibo ? 30 switching characteristics turn ? on time (v cc = ? 30 vdc, i c = ? 150 madc, i b1 = ? 15 madc) t on ? 45 ns delay time t d ? 10 rise time t r ? 40 turn ? off time (v cc = ? 6.0 vdc, i c = ? 150 madc, i b1 = i b2 = ? 15 madc) (v cc = ? 6.0 vdc, i c = ? 150 madc, i b1 = i b2 = ? 15 madc) t off ? 100 storage time t s ? 80 fall time t f ? 30 5. pulse test: pulse width 300 s, duty cycle 2.0%. 6. f t is defined as the frequency at which |h fe | extrapolates to unity. 0 0 -16 v 200 ns 50 1.0 k 200 -30 v to oscilloscope rise time 5.0 ns +15 v -6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns -30 v to oscilloscope rise time 5.0 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit
mmbt2907al, SMMBT2907AL http://onsemi.com 3 typical characteristics figure 3. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 10 v figure 4. collector saturation region i b , base current (ma) -0.4 -0.6 -0.8 -1.0 -0.2 v , collector-emitter voltage (volts) 0 ce i c = -1.0 ma -0.005 -10 ma -0.01 -100 ma -500 ma -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 figure 5. turn ? on time i c , collector current 300 -5.0 figure 6. turn ? off time i c , collector current (ma) -5.0 t, time (ns) t, time (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 t r 2.0 v t d @ v be(off) = 0 v v cc = -30 v i c /i b = 10 t j = 25 c 500 300 100 70 50 30 20 10 7.0 5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 200 t f t s = t s - 1/8 t f v cc = -30 v i c /i b = 10 i b1 = i b2 t j = 25 c
mmbt2907al, SMMBT2907AL http://onsemi.com 4 typical small ? signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 7. frequency effects f, frequency (khz) 10 0.01 figure 8. source resistance effects r s , source resistance (ohms) nf, noise figure (db) nf, noise figure (db) f = 1.0 khz i c = -50 a -100 a -500 a -1.0 ma r s = optimum source resistance 8.0 6.0 4.0 2.0 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 10 8.0 6.0 4.0 2.0 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k i c = -1.0 ma, r s = 430 -500 a, r s = 560 -50 a, r s = 2.7 k -100 a, r s = 1.6 k figure 9. capacitances reverse voltage (volts) 30 figure 10. current ? gain ? bandwidth product i c , collector current (ma) c, capacitance (pf) -0.1 2.0 f t , current-gain bandwidth product (mhz) 20 10 7.0 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 400 300 200 100 80 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 c eb c cb v ce = -20 v t j = 25 c figure 11. collector emitter saturation voltage vs. collector current figure 12. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 150 c ? 55 c 25 c 0.4 0.6 0.9 i c /i b = 10 150 c ? 55 c 25 c
mmbt2907al, SMMBT2907AL http://onsemi.com 5 typical small ? signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 13. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base ? emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 c ? 55 c 25 c figure 14. temperature coefficients i c , collector current (ma) r vc for v ce(sat) coefficient (mv/ c) +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 r vb for v be figure 15. safe operating area v ce (vdc) 100 10 1 0.1 0.01 0.001 0.01 0.1 1 10 ic (a) single pulse test @ t a = 25 c thermal limit 100 ms 1 s 10 ms 1 ms
mmbt2907al, SMMBT2907AL http://onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. mmbt2907alt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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